FDS8935
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS8935
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:2 3.1 W -80 V Continuous Drain Current (ID):2.1 A 19 nC
| Parameter | Value |
|---|---|
| Length | 4 mm |
| Width | 5 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Height | 1.5 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 3.1 W |
| Threshold Voltage | -1.8 V |
| Number of Channels | 2 |
| Input capacitance | 830 pF |
| Continuous Drain Current (ID) | 2.1 A |
| Rds On Max | 28 mΩ |
| Drain to Source Voltage (Vdss) | -80 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 22 ns |
| Element Configuration | Dual |
| Fall Time | 3 ns |
| Rise Time | 3 ns |
| Gate Charge | 19 nC |
| Drain to Source Resistance | 310 mΩ |
| Nominal Vgs | -1.8 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -80 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
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